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Parameters:

  • Model:2SB1412TLQ
  • Manufacturer:HUABAN
  • Date Code:05NOPB 05+NOPB
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:B1412
  • Package:TO-252/DPAK/SC-63/CPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
-5A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Silicon epitaxial planar transistor Low frequency transistor Features 1) Low VCE(sat) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118.
描述与应用PNP硅外延平面晶体管 低频晶体管 特点 1)低VCE(SAT) 2)优秀DC电流增益特性。 3)补充2SD2118。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB1412TLQ
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