集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
集电极连续输出电流IC
Collector Current(IC) |
200mA/0.2A |
截止频率fT
Transtion Frequency(fT) |
250MHz |
直流电流增益hFE
DC Current Gain(hFE) |
82~180 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
<300mV/0.3V |
耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
EPITAXIAL PLANAR NPN Silicon TRANSISTOR Features • High speed switching • Low collector saturation voltage |
| 描述与应用 |
外延平面NPN硅晶体管 特点 •高速开关 •低集电极饱和电压 |