集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 240MHz |
直流电流增益hFE
DC Current Gain(hFE) | 800~3200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 14mV |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | Features •NPN Epitaxial Planar Silicon Transistor •Muting Circuit Applications •Very small-sized package permitting 2SC4919- applied sets to be made smaller and slimmer. •Small output capacitance. •Low collector-to-emitter saturation voltage. •Small ON resistance. |
| 描述与应用 | 特点 •NPN平面外延硅晶体管 •静音电路应用 •非常小尺寸封装，允许2SC4919应用设置做得更小，更薄。 •小的输出电容。 •低集电极 - 发射极饱和电压。 •小阻力。 |