集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 200mA/0.2A |
截止频率fT
Transtion Frequency(fT) | 750MHz |
直流电流增益hFE
DC Current Gain(hFE) | 50~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | <250mV/0.25V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | Features • NPN Epitaxial planar Silicon transistor • High speed switching applications • Fast switching speed • Low collector saturation voltage • High gain bandwidth product • small collector capacitance |
| 描述与应用 | 特点 •NPN外延平面硅晶体管 •高速开关应用 •开关速度快 •低集电极饱和电压 •高增益带宽积 •集电极小电容 |