Please log in first
Home
Cart0

×

Parameters:

  • Model:2SC5383
  • Manufacturer:HUABAN
  • Date Code:05+1R06+ROHS 05+NOPB15KM+9900
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:LF
  • Package:SOT-523/SC75A

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
200mA/0.2A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
250~500
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsLOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) FEATURE Small collector to emitter saturation voltage. VCE(sat)=0.3V max(@Ic=100mA,IB=10mA) Excellent linearity of DC forward gain. Ultra super mini package for easy mounting APPLICATION Hybrid IC,small type machine low frequency voltage Amplify application.
描述与应用低频率AMPLIFY应用 硅NPN外延型(超超超迷你型) 特点 体积小集电极到发射极饱和电压。                     VCE(sat)的=0.3V最大(在@ Ic=100MA,IB=10毫安) 的DC的前锋的出色的线性度有所收获。 超超超迷你封装用于轻松安装, 应用  混合集成电路,小型机低频电压放大应用程序。

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
2SC5383
*Title:
Message:
*Code: