集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 4.5Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 50~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | For High Frequency Amplifier Silicon NPN Epitaxial Type description 2SC5619 is, ultra-small package resin sealed silicon NPN epitaxial Is a form transistor. In addition, a high fT, collector loss is large, display monitor It is most suitable as such. Feature ● fT = 4.5GHz standard fT is high. ● Cob is small. Cob = 1.0pF standard ● for ultra small outline, possible size of the set, high-density mounting. Use TV tuner, communication equipment, mobile phone, etc. |
| 描述与应用 | 高频率放大器 硅NPN外延型 描述 2SC5619，超小型封装树脂密封型硅NPN外延 是一个表格晶体管。 此外，高FT，集热损失很大，显示器 因此最合适。 特点 ●FT =4.5GHz的标准英尺高。 ●科夫是很小的。科夫=1.0PF标准 ●超小外形，可能大小的设置，高密度安装。 使用 电视调谐器，通信设备，移动电话等。 |