集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 1A |
截止频率fT Transtion Frequency(fT) | 270MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~270 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 150mV/0.15V |
耗散功率Pc Power Dissipation | 500mW/0.5W |
Description & Applications | Medium power transistor Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. Applications Small signal low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor |
描述与应用 | 中等功率晶体管 特点 1)高速开关。 (TF:典型:为35ns IC=1.0A) 2)低饱和电压,通常 (典型值150mV的IC=500mA,可IB=50毫安) 3)感性负载和放电功率强 电容负载。 应用 低频小信号放大器 高速开关 结构 NPN硅外延平面型晶体管 |