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Parameters:

  • Model:2SD1000
  • Manufacturer:HUABAN
  • Date Code:05+ 04+06NOPB1300
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:LL
  • Package:SOT-89

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
300mA/0.3A
截止频率fT
Transtion Frequency(fT)
140MHz
直流电流增益hFE
DC Current Gain(hFE)
135~270
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
2W
Description & Applications Silicon NPN epitaxial transistors description 2SD1007 is designed for audio frequency power amplifier application , especially in hybrid integrated circuits Features * low collector saturation voltage * world standard miniature package
描述与应用 NPN硅外延晶体管 描述 2SD1007是专为音频功放中的应用, 特别是在混合集成电路  特点 *低集电极饱和电压

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2SD1000
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