集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC Collector Current(IC) | 700mA/0.7A |
截止频率fT Transtion Frequency(fT) | 250MHz |
直流电流增益hFE DC Current Gain(hFE) | 200~400 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 10mV |
耗散功率Pc Power Dissipation | 500mW/0.5W |
Description & Applications | Silicon Transistor Low-Voltage High-Current Amplifier, Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. |
描述与应用 | 硅晶体管 低电压高电流放大器, 特点 ·低集电极 - 发射极饱和电压。 ·体积非常小,因此很容易提供高密度,小尺寸的混合集成电路。 |