集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 80V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC
Collector Current(IC) | 3A |
截止频率fT
Transtion Frequency(fT) | 30MHz |
直流电流增益hFE
DC Current Gain(hFE) | 120~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 1.2V |
耗散功率Pc
Power Dissipation | 1.3W |
| Description & Applications | Silicon NPN triple diffusion planar type low freauency power amplification Features *High forward current transfer ratio hFE which has satisfactory linearity * Low collector to emitter saturation voltage VCE(sat) * I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. |
| 描述与应用 | 硅NPN三重扩散平面型 低freauency功率放大 特点 *高HFE正向电流传输比，具有良好的线性 *低集电极到发射极饱和电压VCE（SAT） * I型包，使散热片直接焊接 在印刷电路板等的小型电子设备。 |