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Parameters:

  • Model:2SD1760TRP
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:D1760
  • Package:TO-252/CPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
90MHz
直流电流增益hFE
DC Current Gain(hFE)
82~180
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
1W
Description & Applicationsfeatures * Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) structure Epitaxial planar type NPN silicon transistor
描述与应用特点 *低VCE(SAT)。 VCE(饱和)= 0.5V (IC / IB=2A/0.2A) 结构 外延平面型 NPN硅晶体管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD1760TRP
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