集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | ±20V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | |
直流电流增益hFE
DC Current Gain(hFE) | |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | |
耗散功率Pc
PoWer Dissipation | 150mW/0.15W |
| Description & Applications | Silicon P-Channel MOS FET Features High-speed switching S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Low-voltage drive (Vth： −1 to 2V) Low Ron |
| 描述与应用 | 硅P沟道MOS FET 特点 高速开关 S-迷你型包装，使瘦身套和通过自动插入磁带/盒包装。 低电压驱动（VTH：-1至2V） |