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Parameters:

  • Model:2SJ133-Z-T1
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2000
  • Min Order:10
  • Mark/silk print/code/type:J133
  • Package:TO-252/DPAK

最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.45Ω -1A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--3.0V
耗散功率Pd
Power Dissipation
20W
Description & ApplicationsMOS FIELD EFFECT POWER TRANSISTOR P-CHANNEL POWER MOSFET FOR SWITCHING Gate drive available at logic level (VGS = −4 V) High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω) 2SJ133-Z is a lead process product and is ideal for mounting a hybrid IC
描述与应用MOS场效应功率晶体管 P沟道功率MOSFET 用于开关 栅极驱动逻辑电平(VGS=-4 V) 高电流控制由于在小尺寸,低RDS(on)(≅0.45Ω) 2SJ133-Z是一款铅工艺产品,非常适合安装一个混合IC

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2SJ133-Z-T1
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