最大源漏极电压Vds Drain-Source Voltage | 50 V |
栅源极击穿电压V(BR)GS Gate-Source Voltage | 50 V |
漏极电流(Vgs=0V)IDSS Drain Current | -5.0~-12mA |
关断电压Vgs(off) Gate-Source Cut-off Voltage | 0.3~6.0V |
耗散功率Pd Power Dissipation | 150mW/0.15W |
Description & Applications | P channel junction type for low frequency amplify application 2SJ145 DESCRIPTION 2SJ145 is a small type resin sealed P channel junction type FET. It is especially designed for low frequency voltage amplify,analog switch application. FEATURE Small type for mounting. High lyfsl lyfsl = 4mS(typ) Low RDS(ON) RDS(ON)=220 Ω APPLICATION General purpose voltage amplify,analog switch circuit for stereo,cassette deck,VCR. |
描述与应用 | P沟道结型 低频放大应用 <场效应晶体管> 2SJ145 说明 2SJ145是一个小密封型树脂P沟道结型场效应管。它是专为低频电压放大,模拟开关应用。 特写 小安装类型。 高lyfsl lyfsl=4ms(典型值) 低RDS(ON) RDS(ON)=220Ω 应用 通用电压放大,模拟开关电路立体声,盒式录音机,录像机。 |