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Parameters:

  • Model:2SJ205
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:PD
  • Package:SOT-89/SC-62

最大源漏极电压Vds
Drain-Source Voltage
-16V
最大栅源极电压Vgs(±)
Gate-Source Voltage
16V
最大漏极电流Id
Drain Current
-500mA/-0.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
1.5Ω @-300mA,-4V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.4--2.4V
耗散功率Pd
Power Dissipation
2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance
描述与应用MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SJ205
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