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Parameters:

  • Model:2SK1657
  • Manufacturer:HUABAN
  • Date Code:04+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:G19
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage7V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance18Ω/Ohm @10mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.9-1.5V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsN-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 3V power supply Has low gate leakage current,it is suitable for filter circuit
描述与应用N沟道MOS FET作开关 直接被带有3V电源的IC驱动 具有低栅极泄漏电流,这是适用于滤波电路

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK1657
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