| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 500mA/0.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.3Ω/Ohm @300mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Silicon N-Channel MOS FET High speed power switching application Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive |
| 描述与应用 | 硅N沟道MOS FET 高速功率开关应用 低导通电阻 高速开关 低驱动电流 4 V栅极驱动装置---可从5 V源驱动。 适用于DC - DC转换器，马达驱动器，电源开关，电磁驱动器 |