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Parameters:

  • Model:2SK1719
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2000
  • Min Order:10
  • Mark/silk print/code/type:K1719
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.08Ω/Ohm @2.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-2.0V
耗散功率Pd Power Dissipation20W
Description & ApplicationsField Effect Transistor Silicon N Channel MOS Type High Speed,High Current DC-DC Converter Relay Drive and Motor Drive Applications\ 4-volt gate drive Low drain-source ON resistance High forward transfer Admittance Low leakage current
描述与应用场效应晶体管 硅N沟道MOS型 高速,高电流DC-DC转换器 继电器驱动器和电机驱动应用\ 4伏栅极驱动 低漏源导通电阻 较强的正向转移导纳 低漏电流

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK1719
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