| 最大源漏极电压Vds Drain-Source Voltage | 16V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 7V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 5Ω/Ohm @10mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.1V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. Features MOS FIELD EFFECT TRANSISTOR Gate can be driven by 1.5 V Because of its high input impedance, there’s no need to consider drive current Since bias resistance can be omitted, the number of components required can be reduced |
| 描述与应用 | MOS场效应晶体管 N沟道MOS FET高速开关 2SK1958是一个N沟道垂直MOS FET。因为 它可以由一个电压驱动低至1.5 V，这是不 必要考虑驱动电流，这FET是理想的作为 执行器的低电流的便携式系统，如耳机 音响和摄像机。 特性 MOS场效应晶体管 栅极可以由1.5 V驱动 由于其高输入阻抗就没有必要考虑驱动电流 由于偏置电阻可以省略，可以减少所需的部件数量 |