Please log in first
Home
Cart0
Inventory:2600 Min Order：10
Parameters
Related model

×

Parameters：

  • Model：2SK2157
  • Manufacturer：HUABAN
  • Date Code：05+06NOPB900
  • Standard Package：1000
  • Min Order：10
  • Mark/silk print/code/type：NA4
  • Package：TO-243AA

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.06Ω/Ohm @2.5A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage1.5-2.5V
耗散功率Pd Power Dissipation2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING New package intermediate between small-signal and power models Can be directly driven by output of 5-V IC Low ON resistance
描述与应用MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. 特性 N沟道MOS FET高速开关 新包小信号和电源之间的中间 模型 5-V IC输出可直接驱动 低导通电阻

×

Online inquiry：

* From：
To：
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product：
2SK2157
*Title：
Message：
*Code：