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Parameters:

  • Model:2SK227600L
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:K2276
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.135Ω/Ohm @3A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.5V
耗散功率Pd Power Dissipation10W
Description & ApplicationsFeatures Silicon N-Channel MOS For switching Low ON-resistance High-speed switching
描述与应用特性 硅N沟道MOS 用于开关 低导通电阻 高速开关

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK227600L
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