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Parameters:

  • Model:2SK2539
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:AK6
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation
Description & ApplicationsN-Channel Junction Silicon FET High-Frequency Amplifier, Analog Switch Applications Features Silicon N-channel MOS FET High-Frequency Amplifier,Analog Switch Applications Large | yfs | Small Ciss Small-sized package permitting 2SK2539-applied sets to be made small and slim Adoption of FBET process
描述与应用N沟道结硅FET 高频放大器, 模拟开关应用 特性 硅N沟道MOS FET 高频放大器,模拟开关应用 大| Yfs| Ciss小 小型包装允许2SK2539应用 集小巧玲珑 采纳FBET流程

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2539
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