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  • Model:2SK3402
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2000
  • Min Order:10
  • Mark/silk print/code/type:K3402
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current36A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.012Ω/Ohm @18A10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.5-2.5V
耗散功率Pd Power Dissipation10W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Features SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Low On-State Resistance RDS(on)1 = 15 mΩ MAX(VGS = 10 V, ID = 18 A) RDS(on)2 = 22 mΩ MAX(VGS = 4.0 V, ID = 18 A) Low Ciss : Ciss = 3200 pF TYP Built-in Gate Protection Diode TO-251/TO-252 package
描述与应用MOS场效应晶体管 开关N沟道功率MOS FET工业用途 特性 开关 N-沟道功率MOS FET 工业用途 低导通状态电阻 RDS(上)1= 15mΩ最大(VGS= 10 V,ID=18 A) 的RDS(on)=22mΩ最大(VGS=4.0 V,ID= 18) 低CISS:西斯= 3200 pF(典型值) 内置门保护二极管 TO-251/TO-252包装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK3402
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