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Parameters:

  • Model:2SK3492
  • Manufacturer:HUABAN
  • Date Code:05+NOPB
  • Standard Package:700
  • Min Order:10
  • Mark/silk print/code/type:K3492
  • Package:TO-252/TP-FA

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current8A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.115Ω/Ohm @4A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2-2.6V
耗散功率Pd Power Dissipation1W
Description & ApplicationsN-channel silicon MOSFET general -purpose switching device application Features General-purpose Switching device Applications Low ON-resistance Ultrahigh-speed switching 4Vdrive
描述与应用N沟道硅MOSFET 通用开关设备中的应用 特性 通用开关设备应用 低导通电阻 超高速开关 4V驱动器

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK3492
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