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Parameters:

  • Model:2SK368-GR
  • Manufacturer:HUABAN
  • Date Code:05+ 05+nopb
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:KAG
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
100v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-100v
漏极电流(Vgs=0V)IDSS
Drain Current
2.6~6.5ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.4~-3.5v
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & Applications•Silicon N-Channel Junction FET Audio Frequency and High Voltage Amplifier Applications Constant Current Applications • High breakdown voltage: VGDS = −100 V (min) • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) • Small package
描述与应用•硅N沟道结型场效应管 音频频率和高电压放大器的应用 恒流应用 •高击穿,电压:VGDS= -100 V(分钟) •高输入阻抗:IGSS= -1.0 NA(最大值)(VGS=-80 V) •小型封装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK368-GR
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