最大源漏极电压Vds
Drain-Source Voltage | 15v |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -15v |
漏极电流(Vgs=0V)IDSS
Drain Current | 10~20ma |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -0.6~-3.5v |
耗散功率Pd
Power Dissipation | 200mW/0.2W |
| Description & Applications | HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR •HIGH FREQUENCY AMPLIFIER •Low input capacitance Ciss = 4.8 pF TYP. (VDS = 5.0 V, ID = 10 mA, f = 1.0 MHz) • High forward transfer admittance | yfs |2 = 26 mS TYP. (VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz) |
| 描述与应用 | 高频放大器 N-沟道硅结型场效应晶体管 •高频放大器 •低输入电容 西斯=4.8 pF的TYP。 （VDS=5.0 V，ID=10 mA时，F =1.0兆赫） •高正向转移导纳 |的YFS|2= 26 ms典型。 （VDS= VGS=0 V，5.0 V，f = 1.0千赫） |