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Parameters:

  • Model:2SK612-Z-T1
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2000
  • Min Order:10
  • Mark/silk print/code/type:K612
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.003Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-3.0V
耗散功率Pd Power Dissipation10W
Description & ApplicationsN-CHANNEL MOSFET FOR HIGH SPEED SWITCHING Features Fast switching Silicon N-Channel POWER MOS FET Industrial use Suitable for switching power supplies,actuator controls,and pulse circuits Low Ciss No second breakdown 4 V gate drive-logical level
描述与应用用于高速开关的N沟道MOSFET 特性 快速开关 硅N沟道功率MOS FET 工业用 适用于开关电源,执行器控制装置和脉冲电路 低Ciss 无二次击穿 4栅极驱动电压逻辑电平

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK612-Z-T1
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