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  • Model:2SK662
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:10P
  • Package:SOT-323/SC70

最大源漏极电压Vds
Drain-Source Voltage
30v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-30v
漏极电流(Vgs=0V)IDSS
Drain Current
0.5~3ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.1~-1.5v
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & Applications•Silicon N-Channel Junction FET •For low-frequency amplification •High mutual conductance gm •Low noise type
描述与应用•硅N沟道结型场效应管 •对于低频放大 •高互导GM •低噪音型

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK662
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