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Parameters:

  • Model:2SK680A
  • Manufacturer:HUABAN
  • Date Code:05+ 03+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:YB
  • Package:SOT-89/SC-62

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.4Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.5V
耗散功率Pd Power Dissipation2W
Description & ApplicationsN-CHANNEL MOSFET FOR HIGH SPEED SWITCHING Features N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Directly driven by ICs having a 5V power source Not necessary to consider driving current because of its high input impedance Possible to reduce the number of parts by omitting the bias resistor Has low on-state resistance
描述与应用用于高速开关的N沟道MOSFET 特性 N沟道MOS FET用于高速开关 直接带动有5V电源IC 不必考虑驱动电流,因为它的高输入阻抗 能够减少部件的数量通过省略偏置电阻 具有低导通电阻

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK680A
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