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  • Model：BF1100WR
  • Manufacturer：HUABAN
  • Date Code：05+
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：MF
  • Package：SOT-343/SC70-4

最大源漏极电压Vds Drain-Source Voltage14V
最大栅源极电压Vgs(±) Gate-Source Voltage13.2V
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs（th） Gate-Source Threshold Voltage0.3~1V
耗散功率Pd Power Dissipation280mW/0.28W
Description & ApplicationsDual-gate MOS-FETs FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
描述与应用双栅MOS场效应管 特点 •专为使用在9至12 V电源电压 •短沟道晶体管输入电容比具有较高的正向传输导纳 •低噪声增益控制放大器高达1 GHz •高级交叉调制性能在AGC。 应用 •VHF和UHF应用，如电视调谐器和专业的通信设备。 说明 增强型场效应晶体管在一个塑料的超小型SOT143或SOT143R包。该晶体管由MOS-FET源极和衬底的相互联系和内部偏置电路，以确保良好的交叉调制性能在AGC放大器。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BF1100WR
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