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  • Model:BF2030R
  • Manufacturer:HUABAN
  • Date Code:05+ 04+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:NE
  • Package:SOT-143

最大源漏极电压Vds Drain-Source Voltage8V
最大栅源极电压Vgs(±) Gate-Source Voltage6V
最大漏极电流Id Drain Current10mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0.3V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsSilicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
描述与应用硅N沟道MOSFET四极管 •低噪声,高增益控制 高达1GHz的输入阶段 •工作电压5V

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BF2030R
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