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Parameters:

  • Model:BF545B
  • Manufacturer:HUABAN
  • Date Code:05+PB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:21W
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage30v
最大漏极电流Id Drain Current10mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage-0.4--2.2
耗散功率Pd Power Dissipation250mW/0.25W
Description & ApplicationsN-channel silicon junction field-effect transistors N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. Features and benefits Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A).
描述与应用硅N沟道结型场效应晶体管 对称N沟道硅结型场效应晶体管采用SOT23封装 低漏级(典型值500 FA) 高增益 低截止电压(最大2.2 V BF545A)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BF545B
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