集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 18V |
集电极连续输出电流IC
Collector Current(IC) | 150mA/0.15A |
截止频率fT
Transtion Frequency(fT) | 4GHz |
直流电流增益hFE
DC Current Gain(hFE) | 25~70 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 1W |
| Description & Applications | NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities |
| 描述与应用 | NPN平面外延晶体管 安装在一个塑料SOT223 信封，用于宽带 放大器应用。它具有高 输出电压的能力 |