集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 14.5V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 4.5V |
集电极连续输出电流IC
Collector Current(IC) | 80-250mA |
截止频率fT
Transtion Frequency(fT) | 21GHz |
直流电流增益hFE
DC Current Gain(hFE) | 40~100 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 360mW/0.36W |
| Description & Applications | • NPN wideband transistor • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance • Linear and non-linear operation. • RF front end with high linearity system demands (CDMA) • Common emitter class AB driver. |
| 描述与应用 | •NPN宽带晶体管 •高功率增益 •高效率 •低噪声系数 •高转换频率 •发射器是热的铅 •低反馈电容 线性和非线性操作。 •RF前端具有高线性系统要求 （CDMA） •共发射极的AB类驱动程序。 |