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Parameters:

  • Model:BFP490
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:AO
  • Package:SCT-595

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
14V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
4.5V
集电极连续输出电流IC
Collector Current(IC)
600mA/0.6A
截止频率fT
Transtion Frequency(fT)
15GHz
直流电流增益hFE
DC Current Gain(hFE)
90
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
1W
Description & ApplicationsNPN Silicon RF Transistor • For high power amplifiers • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz • Gold metalization for high reliability • Siemens Grounded Emitter Transistor 25 GHz fT - Line
描述与应用NPN硅RF晶体管 •对于高功率放大器 •压缩点P-1dB= 26.5 dBm(在1.8 GHz的最大值)。 可用增益GMA=9.5分贝在1.8 GHz •过渡频率fT>17 GHz的 •高可靠性的黄金金属化 •西门子接地发射极晶体管25 GHz的FT - 线

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BFP490
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