集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 25mA |
截止频率fT
Transtion Frequency(fT) | 5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 90 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 300mW/0.3W |
| Description & Applications | NPN 5 GHz wideband transistor FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. |
| 描述与应用 | 5 GHz的宽带晶体管NPN 特点 •高功率增益 •黄金金属确保卓越的可靠性 •SOT323（S-迷你）封装。 应用 它是专为在RF放大器中使用 混频器和振荡器信号 高达1 GHz的频率。 |