集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 30mA |
截止频率fT
Transtion Frequency(fT) | 5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 40~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 280mW/0.28W |
| Description & Applications | NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W (PNP) |
| 描述与应用 | NPN硅RF晶体管 •对于宽带放大器高达2GHz的和快速的非饱和开关集电极电流从0.5 mA至20 mA •互补类型：：BFT92W（PNP） |