集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 18mA |
截止频率fT
Transtion Frequency(fT) | 9Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 60~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN 9 GHz wideband transistor FEATURES Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope.It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. |
| 描述与应用 | NPN9 GHz的宽带晶体管 特点 低电流消耗 高功率增益 低噪声系数 高转换频率 黄金金属确保卓越的可靠性 SOT323信封。 说明 NPN晶体管在一个塑料SOT323 envelope.It适用于低功率的放大器， 特别是在RF便携式通信设备（手机，无绳电话，寻呼机）高达2 GHz的振荡器和混频器。 |