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Parameters:

  • Model:BSN20
  • Manufacturer:HUABAN
  • Date Code:07NOPB 07NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:M8
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current173mA/0.173A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation830mW/0.83W
Description & ApplicationsN-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package
描述与应用N沟道增强型场效应晶体管 描述 N沟道增强型场效应晶体管在一个塑料包装用 的TrenchMOS™1技术。产品可用性: 开关速度非常快 逻辑电平兼容 超小型表面贴装封装 门源的ESD

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BSN20
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