最大源漏极电压Vds
Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 20V |
最大漏极电流Id
Drain Current | -4A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 140mΩ@ VGS = -4V, ID = -1A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -1~-2.4V |
耗散功率Pd
Power Dissipation | 1.6W |
| Description & Applications | P-Channel MOS Silicon FET Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive |
| 描述与应用 | P沟道MOS硅FET 超高速开关应用 特点 ·低导通电阻。 ·超高速开关。 ·4V驱动器 |