| Q1 Collector-Base Voltage(VCBO) |
50V |
| Q1Collector-Emitter Voltage(VCEO) |
50V |
| Q1 Collector Current(IC) |
100MA |
| Q2 Collector-Base Voltage(VCBO) |
-50V |
| Q2Collector-Emitter Voltage(VCEO) |
-50V |
| Q2Collector Current(IC) |
-100MA |
| Q1 Input Resistance(R1) |
2.2KΩ |
| Q1Base-Emitter Resistance(R2) |
47KΩ |
| Q1(R1/R2) Q1 Resistance Ratio |
0.0468 |
| Q2 Input Resistance(R1) |
2.2KΩ |
| Q2Base-Emitter Resistance(R2) |
47KΩ |
| Q2(R1/R2) Q2 Resistance Ratio |
0.0468 |
| DC Current Gain(hFE) Q1/Q2 |
|
| Transtion Frequency(fT) Q1/Q2 |
250MHZ/250MHZ |
| Power Dissipation |
0.15W |
| Description & Applications |
NPN+PNP silicon transistor (each with two built in resistors) |