| Collector-Base Voltage(VCBO) Q1/Q2 |
50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V/50V |
| Collector Current(IC) Q1/Q2 |
100mA/100MA |
| Q1 Input Resistance(R1) |
10KΩ/Ohm |
| Q1 Base-Emitter Resistance(R2) |
|
| Q1(R1/R2) Q1 Resistance Ratio |
|
| Q2 Input Resistance(R1) |
10KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) |
|
| Q2 (R1/R2) Q2 Resistance Ratio |
|
| hFE DC Current Gain(hFE) Q1/Q2 |
100~600/100~600 |
| Transtion Frequency(fT) Q1/Q2 |
250MHz/250MHZ |
| Power Dissipation Q1/Q2 |
150mW/0.15W |
| Description & Applications |
Features •Emitter common (dual digital transistors) •Two DTC114T chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half |
| 描述与应用 |
特点 •发射极普通的（双数字晶体管） •两个DTC114T在EMT或UMT或SMT封装的芯片。 •安装成本和面积可减少一半 |