Collector-Base Voltage(VCBO) Q1/Q2 |
50V/50V |
Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V/50V |
Collector Current(IC) Q1/Q2 |
100mA/100MA |
Q1 Input Resistance(R1) |
10KΩ/Ohm |
Q1Base-Emitter Resistance(R2) |
47KΩ/Ohm |
Q1 Resistance Ratio |
0.21 |
Q2 Input Resistance(R1) |
10KΩ/Ohm |
Q2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
Q2 (R1/R2) Q2 Resistance Ratio |
0.21 |
DC Current Gain(hFE) |
|
Transtion Frequency(fT) Q1/Q2 |
250MHz/250MHZ |
Power Dissipation Q1/Q2 |
150mW/0.15W |
Description & Applications |
Features •Emitter common (dual digital transistors) •Two DTC114Y chips in a EMT or UMT or SMT package. |
描述与应用 |
特点 •发射极普通的(双数字晶体管) •两个DTC114Y的在EMT或UMT或SMT封装的芯片 |