Collector-Base Voltage(VCBO) Q1/Q2 |
50V/50V |
Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V/50V |
Collector Current(IC) Q1/Q2 |
100mA/100MA |
Q1 Input Resistance(R1) |
10KΩ/Ohm |
Q1Base-Emitter Resistance(R2) |
|
Q1(R1/R2) Q1 Resistance Ratio |
|
Q2 Input Resistance(R1) |
10KΩ/Ohm |
Q2Base-Emitter Resistance(R2) |
|
Q2(R1/R2) Q2 Resistance Ratio |
|
DC Current Gain(hFE)Q1/Q2 |
100~600/100~600 |
Transtion Frequency(fT) Q1/Q2 |
250MHz/250MHZ |
Power Dissipation Q1/Q2 |
150mW/0.15W |
Description & Applications |
Features •General purpose (dual digital transistors) •Two DTC114T chips in a EMT or UMT or SMT package. |
描述与应用 |
特点 •通用(双数字晶体管) •两个DTC114T的在EMT或UMT或SMT封装的芯片 |