最大源漏极电压Vds
Drain-Source Voltage | 25V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 8V |
最大漏极电流Id
Drain Current | 2.7A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 120mΩ@ VGS = 2.5V, ID = 2.2A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.4~1.5V |
耗散功率Pd
Power Dissipation | 960mW/0.96W |
| Description & Applications | Dual N-Channel 2.5V Specified Power Trench MOSFET General Description These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Load switch • DC/DC converter • Motor driving Features • Low gate charge (3.5nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON) • SuperSOTTM-6 package: small footprint |
| 描述与应用 | 双N沟道2.5V额定功率沟槽MOSFET 概述 这些沟道低阈值2.5V指定的MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，但维持出色的开关性能低栅极电荷。 应用 •负荷开关 •DC/ DC转换器 •电机驱动 特点 •低栅极电荷（3.5nC典型值）。 •快速开关速度。 •高性能沟道技术极低的RDS（ON） •SuperSOTTM-6包装：占地面积小 |