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  • Model：FDG312P
  • Manufacturer：HUABAN
  • Date Code：05+NOPB5900
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：12
  • Package：SOT-363/SC70-6

最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		-8V
最大漏极电流Id
Drain Current		-1.2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		250mΩ@ VGS = -2.5V, ID = -1A
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.4~-1.5V
耗散功率Pd
Power Dissipation		750mW/0.75W
Description & ApplicationsP-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features • Low gate charge. • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package.
描述与应用P沟道2.5V额定功率沟道MOSFET 概述 P沟道MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能低栅极电荷。这些器件非常适合用于便携式电子产品应用。 应用 •负荷开关 •电源管理 •DC/ DC转换器 特点 •低栅极电荷。 •高性能沟道技术极低的RDS（ON）。 •紧凑型工业标准SC70-6表面贴装封装。

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