最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -12V |
最大漏极电流Id
Drain Current | -1.5A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 210mΩ@ VGS = -2.5V, ID = -1.2A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.6~-1.5V |
耗散功率Pd
Power Dissipation | 750mW/0.75W |
| Description & Applications | 20V N-Channel Power Trench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). Applications • Load switch • Power management • DC/DC converter Features Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package |
| 描述与应用 | 20V N沟道功率沟槽MOSFET 概述 此P沟道2.5V指定的MOSFET的生产在一个坚固的门版本飞兆半导体先进的功率沟槽过程。它已被优化的栅极驱动电压（2.5V - 12V），适用范围广的电源管理应用。 应用 •负荷开关 •电源管理 •DC/ DC转换器 特点 低栅极电荷 高性能沟道技术极低的RDS（ON） 紧凑型工业标准SC70-6表面贴装封装 |