| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -15V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| Q1基极输入电阻R1 Input Resistance(R1) | 300MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 100~280 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | -250mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 1300mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features •PNP Epitaxial Planar Silicon Transistor •Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting. •The FP106 is composed of 2 chips, one being equivalent to the 2SA1898 and the other the SB10-05C •DC-DC Converter Applications |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •PNP外延平面硅晶体管 •PNP晶体管和肖特基势垒二极管在一个包中，便于高密度安装的复杂类型。 •FP1062芯片组成，其中之一是相当于2SA1898情况SB10-05C的 •DC-DC转换器应用 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |