| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -25V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.47 |
| 直流电流增益hFE DC Current Gain(hFE) | 100 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | FEATURES • COMPOUND TRANSISTOR • on-chip resistor PNP silicon epitaxial transistor For mid-speed switching • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive |
| 描述与应用 | 特点 •复合晶体管 •片上电阻PNP硅外延晶体管中速开关 •高达0.7 A的电流驱动器可用 •片上偏置电阻 •低功耗，在驱动器 |