| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 300mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 2200MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 60~200 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 200mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 1000mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • NPN Epitaxial Planar Silicon Composite Transistors • High-Frequency Amp,Differential Amp Applications • Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly. • The FP201 is formed with two chips, being equivalent to the 2SC4504, placed in one package. • Excellent in thermal equilibrium and pair capability. |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •NPN平面外延硅复合晶体管 •高频放大器，差分放大器应用 •复合型中包含2个晶体管 •PCP包目前在使用，大大提高了安装效率。 •FP201是两个芯片组成，相当于2SC4504，放置在一个包装。 •优秀的热平衡和对能力。 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |